Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
J. Tersoff
Applied Surface Science
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983