J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
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