Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids
M. Hargrove, S.W. Crowder, et al.
IEDM 1998