A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000