J.H. Stathis, R. Bolam, et al.
INFOS 2005
Gallium and indium have been found to dissolve ZnSe and ZnTe to appreciable extents at elevated temperatures. T-X phase diagrams were determined which indicate a simple binary system behavior. II-VI crystals were grown utilizing the data, and although heavily donor-doped, they exhibited relatively high resistivities. Attempts to uncompensate the donors resulted in the precipitation of the group III element. © 1966.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009