S.M. Sadjadi, S. Chen, et al.
TAPIA 2009
This paper reviews the recent advances of silicon-on-insitlator (SOI) technology for complementary metal-oxide-semiconductor (CMOS) very-large-scale-integration memory and logic applications. Static random access memories (SRAM's), dynamic random access memories (DRAM's), and digital CMOS logic circuits are considered. Particular emphases are placed on the design issues and advantages resulting from the unique SOI device structure. The impact of floating-body in partially depleted devices on the circuit operation, stability, and functionality are addressed. The use of smart-body contact to improve the power and delay performance is discussed, as are global design issues. ©1998 IEEE.
S.M. Sadjadi, S. Chen, et al.
TAPIA 2009
Rajeev Gupta, Shourya Roy, et al.
ICAC 2006
Kaoutar El Maghraoui, Gokul Kandiraju, et al.
WOSP/SIPEW 2010
John M. Boyer, Charles F. Wiecha
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