Simple Theory of Double-Barrier Tunneling

This paper analyzes resonant electron tunneling in parallel-plane heterostructures having a central “well” region enclosed by two generalized “barriers,” which are reflectors of the Bloch waves. A single Bloch pair is assumed for the central region as well as in the surrounding semi-infinite semiconductors. The transmission probability versus electron energy is obtained, for this model, in terms of the transmission probabilities of the two barrier elements taken separately and the quasi-classical transit time for the trapped electron to make one circuit of the central “well” layer. The implications and limitations of these results are briefly discussed. © 1989 IEEE