Simple theory of acoustic surface-wave amplification using very thin semiconductor layers

Abstract

A theory of electro-acoustic surface-wave interaction is presented for a layered structure of piezoelectric and semiconductor. The semiconductor is assumed to be thin compared to both the acoustic wavelength and the Debye length. Diffusion has been taken into account in the analysis. Computed curves of gain are given and the dependence of gain on frequency, carrier concentration, drift velocity, and semiconductor thickness is discussed. © 1971 The American Institute of Physics.