J.A. Barker, D. Henderson, et al.
Molecular Physics
We report on the fabrication and analysis of silicon-oxynitride (SiON) as core material for silicon-based planar photonic waveguide circuits. Features of devices made of this particular SiON material are: (1) a silicon-compatible technology (low-cost perspective), (2) a waveguide structure with high dielectric index contrast, allowing a very compact device layout (approximately lOx smaller radius of curvature than conventional doped S1U2 technology), (3) a low optical loss < 0.15 dB/cm, in the 1550 nm telecommunication window and (4) a negligible polarization dependence. The materials aspects and resulting analyses of the SiON layers as well as particular device properties are described. © 1999 Materials Research Society.
J.A. Barker, D. Henderson, et al.
Molecular Physics
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
Ellen J. Yoffa, David Adler
Physical Review B
J. Tersoff
Applied Surface Science