A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
The initial stage of the thermal oxidation of various crystallographic orientations of silicon ((100), (110), and (111) orientations) reveals a complex rate behavior. This behavior is not understood within the conventional linear-parabolic model. A recently revised model which explicitly contains the areal density of Si atoms and mechanical stress effects is shown to provide both a qualitative (for all orientations studied) and somewhat quantitative (for (110) and (111) orientations) explanation of the complex substrate orientation effects. © 1986, The Electrochemical Society, Inc. All rights reserved.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
J.A. Barker, D. Henderson, et al.
Molecular Physics