C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac point we estimate the field-induced band gap or band overlap in the different layers. © 2010 American Chemical Society.
C.M. Brown, L. Cristofolini, et al.
Chemistry of Materials
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
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Polyhedron
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Physica E: Low-Dimensional Systems and Nanostructures