Silicon heterojunction thin-film transistors for active-matrix flat-panel and flexible displays

Abstract

The prospect of thin-film heterojunction field-effect transistors comprised of hydrogenated amorphous Si gate contacts on crystalline Si substrates for applications in large-area electronics and particularly flat-panel and flexible displays is discussed. Several advantages of these devices including low-voltage operation, high stability, immunity to floating body effects, low-temperature processing and design flexibility are explained and verified experimentally.