About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Silicon di-interstitial in ion-implanted silicon
Abstract
A new Si di-interstitial model is derived from the Si-P6 electron paramagnetic resonance spectrum observed in neutron-, proton-, or ion-implanted silicon. Two Si interstitials lie in the 100 plane at a position considerably off from two tetrahedral interstitial sites nearby, sharing one Si lattice atom. The di-interstitial disappears at 170°C annealing and can form the 〈110〉 interstitial chains which are considered to be a "building block" of the 311 extended defects frequently observed in ion-implanted Si.