David B. Mitzi
Journal of Materials Chemistry
Process plasmas generate energetic ions that participate in film growth through sputtering, atomic mixing, densification, enhanced migration of adatoms and field-enhanced diffusion via charging. RF-biased PECVD favors the anatase phase of TiO2 due to film densification by energetic ion bombardment suppressing the rutile phase. With a given bias voltage, anatase dominates at low deposition temperatures, below 400°C, but transforms to rutile upon annealing at higher temperatures. The dielectric constant of 60 (±5) showed no variation with a film thickness in the range between 20 to 200 nm, due to a thin SiO2 diffusion barrier intentionally grown at the Si/TiO2 interface. This oxide barrier prevents TiSix formation, resulting in a low leakage current below 10-10 A/cm2. © 1998 Elsevier Science Ltd. All rights reserved.
David B. Mitzi
Journal of Materials Chemistry
Douglass S. Kalika, David W. Giles, et al.
Journal of Rheology
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
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