SiGe pMOSFET's with Gate Oxide Fabricated by Microwave Electron Cyclotron Resonance Plasma Processing

Abstract

A new process, electron cyclotron resonance (ECR) microwave plasma oxidation, has been developed to produce a gate-quality oxide directly on SiGe alloys. One µm Al gate Sio.86 Geo.15p-metal-oxide-semiconductor field-effect-transistors (pMOSFET‘s) with ECR-grown gate oxide have been fabricated. It is found that saturation transconductance increases from 48 mS/mm at 300 K to 60 mS/mm at 77 K. Low field hole mobilities of 167 cm2cm2N-s-s at 300 K and 530 cm2N -s at 77 K have been obtained. ©1994 IEEE