SHORT TIME ANNEALING OF As AND B ION IMPLANTED Si USING TUNGSTEN-HALOGEN LAMPS.

Abstract

B and As implanted Si wafers have been thermally annealed by an array of tungsten halogen lamps at 1000-1200 degree C for 1-10 sec. Annealing above 1100 degree C leaves the crystal free of extended defects in all cases as determined by TEM. An enhanced diffusion is observed above normal values characterized by a low activation energy for both As and B samples. This enhanced diffusion is transient and occurs within about one second since the RBS and SIMS dopant profiles are identical for 1 sec and a 10 sec anneal.