Short-gate-length epitaxial-channel self-aligned GaAs MESFETs with very large k-factor

Abstract

The fabrication of short-gate-length, epitaxial-channel self-aligned GaAs MESFETs with very large k-factor is described. It is shown that devices with gate lengths of less than 0.25 μm can be fabricated with well-controlled short-channel effects. Finally, it is demonstrated that self-aligned devices with gate lengths as short as 50 nm can retain reasonable FET characteristics for operation near maximum transconductance.