About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Shallow silicide contact
Abstract
Device miniaturization requires dimensional shrinkage not only in the lateral directions but also in the vertical direction. A silicide contact in a shallow junction Si device has to be shallow, which means that in forming the silicide it may not consume more than a few hundred angstroms of Si from the substrate. A general scheme of making such a shallow silicide contact is reported here. The scheme utilizes the effect of alloying to dilute the contact reaction, and it produces a shallow contact and a protective diffusion barrier at the same time. Results of Pt-Cr alloys are presented for illustration.