Semiconductor superlattices by MBE and their characterization

Abstract

The deposition of semiconductor superlattices of GaAs-Ga1-x AlxAs and In1-xGaxAs-GaSb1-yAsy by molecular beam epitaxy is described. Their evaluations by high-energy electron diffraction and X-ray measurement are presented. Properties obtained from transport, optical and magneto experiments are summarized to characterize the electronic subband structure. © 1981.