Effect of HCI degradation on the variability of MOSFETS
C. Zhou, Keith A. Jenkins, et al.
IRPS 2018
Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Different device geometries and operating conditions are evaluated and compared.
C. Zhou, Keith A. Jenkins, et al.
IRPS 2018
Franco Stellari, Peilin Song, et al.
IEEE ITC 2006
Mark B. Ketchen, Manjul Bhushan, et al.
IEEE International SOI Conference 2005
Anuja Sehgal, Peilin Song, et al.
ESSCIRC 2006