Walter H. Henkels, Nicky C. C. Lu, et al.
IEEE T-ED
Self-heating of FinFET transistors is a reliability concern, especially for large devices with dense arrays of fins on Silicon On Insulator. In this paper, device-level temperature measurements acquired using an optical technique are presented. The 2-D time-resolved emission measurements through the substrate are used to monitor the temperature-dependent modulation of the OFF-state leakage current of individual transistors, noninvasively and with high time accuracy. Different device geometries and operating conditions are evaluated and compared.
Walter H. Henkels, Nicky C. C. Lu, et al.
IEEE T-ED
Joachim N. Burghartz, Mehmet Soyuer, et al.
IEEE Journal of Solid-State Circuits
Franco Stellari, Peilin Song, et al.
IEEE Transactions on Electron Devices
Han-Su Kim, Ya-Hong Xie, et al.
Journal of Applied Physics