Metal-Clad InP Cavities for Nanolasers on Si
Preksha Tiwari, Svenja Mauthe, et al.
IPC 2020
Self-heating is a crucial effect in integrated nanophotonic devices regarding their power consumption. In this work, we employ coupled 3D thermo-electrical simulations to gain insight into the thermal behavior related to traps in a monolithic InP-InGaAs-InP pin-diode fabricated at IBM-Research Zurich. From transport study, two types of defects are found to be very likely present in the studied device: (i) positive oxide charges close to the interface between III-V materials and top oxide layer and (ii) electron-type traps at the p-InP/i-InGaAs interface. Thermal simulations show that the presence of electron-type traps at the p/i interface enhances the self-heating in the device.
Preksha Tiwari, Svenja Mauthe, et al.
IPC 2020
Peter Nirmalraj, Damien Thompson, et al.
Nature Materials
Philipp Mensch, Siegfried Karg, et al.
Applied Physics Letters
F. Menges, Fabian Motzfeld, et al.
IEDM 2016