Compression for data archiving and backup revisited
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
The etch rate in aqueous KOH solutions and in CF4-O2 plasmas was measured for hydrogenated amorphous silicon (a-Si) as a function of preparation conditions, and was compared to that of silicon in the hydrogen-free amorphous, polycrystalline, and crystalline form. The rate depends strongly on hydrogen content in wet etching and moderately in plasma etching. In analogy to crystalline silicon, the plasma etch rate of a-Si exhibits a strong dependence on the Fermi level. © 1988, The Electrochemical Society, Inc. All rights reserved.
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025
E. Burstein
Ferroelectrics
R.J. Gambino, N.R. Stemple, et al.
Journal of Physics and Chemistry of Solids