Conference paper
Transistor-limited constant voltage stress of gate dielectrics
B.P. Linder, D.J. Frank, et al.
VLSI Technology 2001
The use of polarized light to generate oriented paramagnetic centers in glass is discussed. Analytic expressions are derived for the resultant EPR lineshape, and are compared to experimental results obtained for a-SiO2. Analysis of the EPR anisotropy provides information concerning the formation mechanism of the paramagnetic center and about the degree of lattice relaxation following the formation of the center. © 1987 The American Physical Society.
B.P. Linder, D.J. Frank, et al.
VLSI Technology 2001
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