F.-J. Meyer Zu Heringdorf, D. Kähler, et al.
Surface Review and Letters
Paper
Selective desorption of interfacial SiO2
Abstract
The selective thermal decomposition of silica from a silicate/silicon (001) interface without silicidation of the dielectric was reported. The electrical characteristics of silicate/silicon interfaces were studied. The intriguing consequence of the relative stability of metal-oxide compounds was discussed. It was shown that after initial silicate formation excess of interfacial silica is decomposed.
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