The DX centre
T.N. Morgan
Semiconductor Science and Technology
In this work, we demonstrate the growth of vertically oriented GaAs nanowires (NWs) and microplatelets directly on a patterned SiO2/Si(111) substrate by hydride vapor-phase epitaxy (HVPE). Direct condensation of GaAs on Si was achieved through a critical surface preparation under an As-controlled atmosphere. GaAs NWs were grown along the ⟨111⟩B direction with a hexagonal cross section when the hole opening diameter (D) in the SiO2 mask was below 350 nm. Larger apertures (D ≥ 500 nm) resulted in uniform microplatelets. This study highlights the capability of HVPE for selective area growth of GaAs directly on Si and thus the potential of HVPE as a generic heterointegration process for III-V semiconductors on silicon.
T.N. Morgan
Semiconductor Science and Technology
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings