Schottky barriers on diamond (1 1 1)

Abstract

We have measured Schottky barrier heights ØB = 1.3 eV for Au and ØB = 1.5 eV for Al on (p-type) diamond(1 1 1)−(1 × 1) using photoelectron spectroscopy with synchroton radiation. These barrier heights yield a barrier index of S = 0.2, which is closer to the values for Si and Ge (S ∼ 0.1) than to the value S = 0.4 calculated for jellium on an ideal diamond(1 1 1) surface. After reacting Al with the diamond surface by annealing to 800° C, we find that ØB decreases by 0.24 to 1.25 eV. © 1980, All rights reserved.