Paper
The DX centre
T.N. Morgan
Semiconductor Science and Technology
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
T.N. Morgan
Semiconductor Science and Technology
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