M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Schottky barrier probe tunneling is reviewed as a method for measuring gaps in the electronic density of states of exotic materials. Although there have been notable successes, the Schottky barrier itself is found to produce an intrinsic zero bias resistance peak, which limits the usefulness to strong, well-defined gaps. © 1985.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
J.R. Thompson, Yang Ren Sun, et al.
Physica A: Statistical Mechanics and its Applications
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
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Chemistry of Materials