Ulf Gennser, V.P. Kesan, et al.
Journal of Electronic Materials
Paper
Schottky barrier formation by laser irradiation processing
Abstract
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Related
Q.Y. Ma, T.J. Licata, et al.
Applied Physics Letters
H.K. Liou, X. Wu, et al.
Applied Physics Letters
P.W. Li, H.K. Liou, et al.
Applied Physics Letters