Schottky barrier formation by laser irradiation processing

E.S. Yang; C.M. Wu; H.J. Vollmer; T.O. Sedgewick; R.T. Hodgson

doi:10.1063/1.91965

Applied Physics Letters

Paper

23 Jul 2008

Schottky barrier formation by laser irradiation processing

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Abstract

A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.

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