Q.Y. Ma, E.S. Yang, et al.
Journal of Electronic Materials
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Q.Y. Ma, E.S. Yang, et al.
Journal of Electronic Materials
Q.Y. Ma, X. Wu, et al.
Physica C: Superconductivity and its applications
C.M. Wu, E.S. Yang, et al.
Journal of Applied Physics
Q.Y. Ma, E.S. Yang, et al.
Journal of Applied Physics