E.S. Yang, C.M. Wu, et al.
Journal of Applied Physics
A Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
E.S. Yang, C.M. Wu, et al.
Journal of Applied Physics
Ulf Gennser, V.P. Kesan, et al.
Applied Physics Letters
Ulf Gennser, V.P. Kesan, et al.
Physical Review Letters
Q.Y. Ma, E.S. Yang, et al.
Applied Physics Letters