Dependence of electrical characteristics on laser power in cw laser processed Al-nSi diodes

Abstract

We report here data of the capacitance-voltage and current-voltage measurements on cw laser processed Al-nSi diodes. The range of the laser power is between 12 and 20 W. Significant changes in the ideality factor, reverse saturation current, thermal activation energy, doping concentration, and effective Schottky barrier height have been observed. These results appear to be consistent with the mechanisms of aluminum diffusion and defect generation with high-temperature stress under high-power laser irradiation.