F. Legoues, A.R. Powell, et al.
Journal of Applied Physics
Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
F. Legoues, A.R. Powell, et al.
Journal of Applied Physics
S. Tiwari, H.I. Hanafi, et al.
DRC 1994
G. Arjavalingam, J.-M. Halbout, et al.
TMPEO 1986
D. Grischkowsky, C.C. Chi, et al.
TMPEO 1986