Publication
Journal of Applied Physics
Paper

Room-temperature conductivity and location of mobile sodium ions in the thermal silicon dioxide layer of a metal-silicon dioxide-silicon structure

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Abstract

Room-temperature conductivity of mobile Na+ ions in the SiO 2 layer of a metal-silicon dioxide-silicon structure is directly shown to be interface limited by use of the photo I-V technique. Na+ ions were found to be located within ≈50 Å of the interfaces regardless of field stressing conditions (2-4.5 MV/cm), temperature (20-40°C), number of ions drifted (up to 2.6×1012 cm-2), or number of temperature-bias cycles used to move Na+ ions back and forth between the interfaces.

Date

26 Aug 2008

Publication

Journal of Applied Physics

Authors

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