Response to &quot;comment on ’E’ centers and nitrogen-related defects in silicon dioxide films’&quot;

J.H. Stathis; J. Chapple-Sokol; E. Tierney; J. Batey

doi:10.1063/1.105848

Applied Physics Letters

Review

01 Dec 1991

Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"

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Abstract

The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).

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Moderate-temperature anneal of 7-nm thermal SiO₂ in O ₂- and H₂O-free atmosphere: Effects on Si-SiO₂ interface-trap distribution

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Electron heating studies in silicon dioxide: Low fields and thick films

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Journal of Applied Physics

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E' centers and nitrogen-related defects in SiO₂ films

J.H. Stathis, J. Chapple-Sokol, et al.

Applied Physics Letters

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Abstract

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