PaperIdentification of an interface defect generated by hot electrons in SiO2J.H. Stathis, D.J. DimariaApplied Physics Letters
PaperNeutral E' centers in microwave downstream plasma-enhanced chemical-vapor-deposited silicon dioxideW.L. Warren, P. Lenahan, et al.Applied Physics Letters
PaperElectron spin resonance study of metal-nitride-silicon structures: Observation of Si dangling bonds with different configurations and trapping properties in silicon nitrideD. Jousse, Jerzy Kanicki, et al.Applied Surface Science
PaperInterface defects of ultrathin rapid-thermal oxide on siliconJ.H. Stathis, D.A. Buchanan, et al.Applied Physics Letters