Response to &quot;comment on ’E’ centers and nitrogen-related defects in silicon dioxide films’&quot;

J.H. Stathis; J. Chapple-Sokol; E. Tierney; J. Batey

doi:10.1063/1.105848

Applied Physics Letters

Review

01 Dec 1991

Response to "comment on 'E' centers and nitrogen-related defects in silicon dioxide films'"

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Abstract

The anomalous properties of defect centers observed by Warren and Lenahan (ref. 1), in certain plasma enhanced chemical vapor deposited silica films must be examined in a broader light. The presence of a compensating impurity is indicated.(AIP).

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Analysis of the superhyperfine structure and the g tensor of defects in amorphous silicon

J.H. Stathis

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Potential fluctuations due to P_b centres at the Si/SiO₂ interface

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Microelectronic Engineering

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IIIB-5 Fabrication of Thin Gate Oxide MOSFET's Using Low-Temperature Plasma-Enhanced Chemical-Vapor-Deposited SiO₂

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Abstract

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