Resonant Raman scattering in stage-1 graphite acceptor intercalated compounds: C-AsF5

Abstract

A Raman scattering cross section for stage-1 graphite acceptor intercalated compounds is calculated within a two-dimensional tight-binding electronic band model. It is shown that the two-band resonant Raman scattering process is much more efficient than the possible three-band process. The experimental results on stage-1 C-AsF5 are fitted to the two-band model and the fitting procedure yields the threshold for the valence- to conduction-band transition T=2.45 eV, and the broadening constant =0.02 eV. © 1987 The American Physical Society.