We report here the result of our calculations on the scattering properties of two random networks. One of these is the 519 atom model due to Polk and the other a 201 atom model generated by Steinhardt et al. We compare experimental and calculated values of the reduced intensity function and the influence of relaxation of a network on the reduced intensity function. We present calculations of the structure factor, dark field and interference images for these models. As in our earlier findings there is at least orientation in each random network which shows a considerable degree of order and can qualitatively account for the contrast observed in electron micrographs. In the latter calculations we also explore effects of aperture geometry on the image results. © 1975.