Resistive random access memory (RRAM) based computation-in-memory (CIM) architectures are attracting a lot of attention due to their potential in performing fast and energy-efficient computing. However, the RRAM variability and non-idealities limit the computing accuracy of such architectures, especially for multi-operand logic operations. This paper pro-poses a voltage-based differential referencing-in-array scheme that enables accurate two and multi-operand logic operations for RRAM-based CIM architecture. The scheme makes use of a 2T2R cell configuration to create a complementary bitcell structure that inherently acts also as a reference during the operation execution; this results in a high sensing margin. More-over, the variation-sensitive multi-operand (N)AND operation is implemented using complementary-input (N)OR operation to further improve its accuracy. Simulation results for a post-layout extracted 512x512 (256Kb) RRAM-based CIM array show that up to 56 operand (N)OR/(N)AND operation can be accurately and reliably performed as opposed to a maximum of 4 operands supported by state-of-the-art solutions, while offering up to 11.4X better energy-efficiency.