Steven L. Wright, Ehsan Samei
SPIE Medical Imaging 2004
A low-temperature MBE-grown buffer layer has been used to reduce backgating in GaAs/AlGaAs semiconductor-insulator-semiconductor FET’s (SISFET’s). Comparison with a control wafer having no low-temperature buffer (LTB) reveals an improvement in backgating threshold voltage by a factor of 3, improvement in output conductance and short-channel characteristics, and no significant change in threshold voltage, threshold-voltage spread, and microwave characteristics. The FET’s with LTB exhibited increased sensitivity, at 80 K, to trapping of hot electrons. © 1991 IEEE
Steven L. Wright, Ehsan Samei
SPIE Medical Imaging 2004
Yoshimine Kato, Yuki Miyoshi, et al.
IEICE Transactions on Electronics
D.D. Tang, Paul M. Solomon
IEEE JSSC
A. Palevski, Paul M. Solomon, et al.
IEEE Electron Device Letters