D. Edelstein, H.S. Rathore, et al.
IRPS 2004
The reactive sticking coefficient, SR, of SiH4 on the Si (111)-(7×7) surface has been studied as a function of hydrogen coverage (ΘH) in the temperature range from 100 to 500 °C. Evidence is seen for two adsorption regimes which are proposed to correspond to minority and majority surface sites. On the minority sites (ΘH=0 to 0.08), SR is approximately 10-5 and essentially no dependence of SR on surface temperature, TS, is found. Reactive sticking becomes a complicated function of TS and ΘH, with SR decreasing, on the majority sites (ΘH≫008). © 1989.
D. Edelstein, H.S. Rathore, et al.
IRPS 2004
S. Gates, C.M. Greenlief, et al.
The Journal of Chemical Physics
D.B. Beach, R.B. Laibowitz, et al.
Integrated Ferroelectrics
D.D. Koleske, S. Gates
The Journal of Chemical Physics