Reactive ion etching of InAlAs with Ar/Cl₂ mixtures for ridge waveguide lasers

Abstract

We have investigated the etching characteristics of InAlAs for reactive ion etching (RIE) with mixtures of argon (Ar) and chlorine (Cl2). Nearly vertical walls and a smooth surface morphology can be achieved for etch rates of up to 200 nm/min. For an application we have produced dry-etched ridge waveguide lasers in the In(Ga)AlAs/InGaAs material system with threshold currents as low as 12 mA. © 1993.