Reaction study of cobalt and silicon nitride

Abstract

The interaction of cobalt (Co) and low-pressure chemical-vapor-deposited silicon nitride (LPCVD Si3N4 during anneals from 200 °C-1000 °C in vacuum, Ar, and Ar-H2 ambient (95% Ar and 5% H2 has been studied. After the anneals, reduction of Si3N4 by Co to form cobalt silicide and cobalt nitride phases has been observed. Reduction of Si3N4 initially occurs at 600 °C; however, gross physical damage occurs at temperatures of —900 °C in Ar. The addition of hydrogen to the ambient enhances the onset of physical damage to the nitride film by as much as 200 °C. Mechanisms governing the Co/Si3N4 reaction have been proposed. © 1993, Materials Research Society. All rights reserved.