Publication
Applied Physics Letters
Paper

Reaction of trimethylgallium in the atomic layer epitaxy of GaAs (100)

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Abstract

The initial reaction of the As-rich c(2×8) GaAs(100) surface with trimethylgallium (TMGa) has been studied by x-ray and ultraviolet photoemission. TMGa was found to chemisorb dissociatively at temperatures below 300°C with many of the methyl radicals remaining on the surface. Bonding requirements and steric effects limit the saturation coverage to about 0.1 monolayer. At temperatures above 300°C, TMGa was observed to dissociate on the surface, release all the methyl groups, and deposit Ga up to a self-limiting coverage. This process is most effective at high temperatures. We propose a model for the temperature dependence of the chemisorption which explains and unites many reported observations in the atomic layer epitaxy of GaAs using TMGa and arsine.

Date

01 Dec 1989

Publication

Applied Physics Letters

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