Publication
ESSDERC 1987
Conference paper
Rapid annealing for shallow junction formation
Abstract
The application of rapid thermal annealing (RTA) of ion implanted impurities for the formation of shallow junctions provides advantages of reducing dopant distribution while removing the lattice damage. The higher temperature processing also improves the electrical activity of the dopants. The physical mechanisms of the redistribution and activation of ion implanted impurities are complex and RTA provides a valuable tool for investigating the details.