Publication
ESSDERC 1987
Conference paper

Rapid annealing for shallow junction formation

Abstract

The application of rapid thermal annealing (RTA) of ion implanted impurities for the formation of shallow junctions provides advantages of reducing dopant distribution while removing the lattice damage. The higher temperature processing also improves the electrical activity of the dopants. The physical mechanisms of the redistribution and activation of ion implanted impurities are complex and RTA provides a valuable tool for investigating the details.

Date

14 Sep 1987

Publication

ESSDERC 1987

Authors

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