Publication
Solid State Electronics
Paper

Range of high energy phosphorus and medium energy boron ions implanted in polymers

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Abstract

The range of phosphorus ions implanted at high energy in polymers, where wide disagreement among calculated values exists, is experimentally estimated. As Secondary Ion Mass Spectrometry (SIMS) measurements in polymers are difficult for low impurity implant doses, these measurements were done on the underlying silicon material where sensitivity is enhanced, implanting through variable polymer thicknesses. The experimental profiles are approximated by a TRIM code, using the implantation energy as parameter. The same energy is then used to estimate the projected range and straggling of ions in the polymer. This method is also applied to calculate the range of boron implanted at medium energy. Comparison with other existing experimental data is made. Finally our results are compared with the tabular results of Smith and Gibbons. © 1990.

Date

01 Jan 1990

Publication

Solid State Electronics

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