Random Telegraph Signals in Accumulation-Mode SOI/nMOSFET

Abstract

Random telegraph signals (RTS‘s) arising from interfacial defects in small accumulation-mode SOI/nMOSFET's have been studied. By analyzing the average capture time of each RTS as a function of both the front-gate and back-gate voltages, we are able to distinguish between defects at the front interface from those at the back interface. In contrast to the RTS's typically observed in enhancement-mode MOSFET's where only those interfacial defects within an energy range close to the Si band edge can be measured, the use of the accumulation-mode SOI/nMOSFET makes it possible to probe interface traps near midgap. © 1994 IEEE