About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Journal of Non-Crystalline Solids
Paper
Raman scattering studies in dilute and concentrated a-Si1-xHx alloys
Abstract
Raman scattering and optical absorption measurements have been used to study the structural and electronic properties of a-Sil-xHx films made by homogeneous chemical vapor deposition. The Raman spectra show that the hydrogenated films are more ordered than pure a-Si films. For x ≲0.04 the optical gap E0 correlates with ΔVH-1, the structural order parameter. At higher hydrogen concentrations, however, ΔVH-1 is relatively constant and E0 increases due to alloy rather than structural ordering effects. © 1983.