J.C. Tsang, M.V. Fischetti
Microelectronics Reliability
Paper
Raman scattering from H or O terminated porous Si
Abstract
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
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