J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
The dependence of the crystalline structure of porous Si on the bonding of surface Si atoms to either H or O has been studied by Raman spectroscopy. H terminated porous Si shows microcrystalline character while O terminated porous Si shows atomic disorder within the Si particles.
J.A. Kash, J.C. Tsang, et al.
IEEE Journal of Solid-State Circuits
Subramanian S. Iyer, P.R. Pukite, et al.
Journal of Crystal Growth
J.C. Tsang
ECS Meeting 2002
J.R. Kirtley, R.T. Collins, et al.
Physical Review B