William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Examination of near-gap low-temperature photoluminescence (PL) from epitaxial, MBE-prepared Si and Si1-xGex alloys, prepared commensurately to (0 0 1) Si, failed to show either free excitons or dopant- bound-excitons in as-prepared layers. Significant luminescence was, however, successfully induced by the selective introduction of two well-known, and moderately shallow, radiation-damage centers (I1 and G) into these epi-layers. Both centers exhibit alloy broadened spectra which, together with detailed PL intensity vs etch depth, indeed demonstrate that the radiative defects are contained well-within the epitaxial layers. © 1991.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
T.N. Morgan
Semiconductor Science and Technology
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics