U. Wieser, U. Kunze, et al.
Applied Physics Letters
Quantum yields for the loss of disilane and the formation of silane in the 193 nm photodissociation of disilane have been measured using time-resolved infrared diode laser absorption spectroscopy under single excimer laser pulse conditions at total pressures of 5 to 10 Torr in helium buffer gas. The total quantum yield for loss of disilane is 0.7±0.1 while the quantum yield for formation of silane is only 0.10±0.03. The results suggest that numerous photodissociation pathways as well as non-photodissociative relaxation pathways exist for disilane excited near its electronic absorption threshold. © 1989.
U. Wieser, U. Kunze, et al.
Applied Physics Letters
K. Ismail, B.S. Meyerson, et al.
IEEE Electron Device Letters
S.J. Koester, K. Ismail, et al.
DRC 1997
Mark A. Eriksson, Mark Friesen, et al.
Quantum Information Processing