E. Tutuc, J.O. Chu, et al.
Applied Physics Letters
Quantum yields for the loss of disilane and the formation of silane in the 193 nm photodissociation of disilane have been measured using time-resolved infrared diode laser absorption spectroscopy under single excimer laser pulse conditions at total pressures of 5 to 10 Torr in helium buffer gas. The total quantum yield for loss of disilane is 0.7±0.1 while the quantum yield for formation of silane is only 0.10±0.03. The results suggest that numerous photodissociation pathways as well as non-photodissociative relaxation pathways exist for disilane excited near its electronic absorption threshold. © 1989.
E. Tutuc, J.O. Chu, et al.
Applied Physics Letters
S.J. Koester, G. Dehlinger, et al.
GFP 2005
K. Rim, J.O. Chu, et al.
VLSI Technology 2002
K. Ismail, F. Legoues, et al.
Physical Review Letters