Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Metal-oxide-semiconductor (MOS) structures incorporating thermally grown silicon dioxide (SiO2) films were implanted with arsenic ions (As+) and then annealed at high temperatures. Coulombic-attractive traps (for electrons) were produced with the avalanche injection of holes from the silicon substrate and their subsequent capture on some of these arsenic-related sites. During internal photo-emission of electrons from a thin aluminum gate, the voltage shifts due to hole annihilation by electrons were recorded and the macroscopic capture cross-section, σ, was determined. We found that σ varies from ∼10-12 to 3 × 10-15 cm2 for average electric fields ranging from 2 × 105 to 3 × 106 V/cm. Below an average field threshold of Fth ≈ 1.2 × 106 V/cm, the capture cross-section versus average field (σ versus Fave) dependence follows a power law with the exponent n ≈ -1.5. Above the average field threshold, the power law exponent was found to be n ≈ -3.0. Also when the amphoteric arsenic-related sites are empty, they form neutral trapping sites for electrons. For average fields ranging from 5 × 105 to 6 × 106 V/cm, the neutral cross-section is found to be approximately constant at σ ≈ (1-2) × 10-15 cm2. © 1989.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
J.A. Barker, D. Henderson, et al.
Molecular Physics
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials