Quantum interference in ultrashort channel length silicon metal-oxide-semiconductor field-effect transistors

Abstract

Silicon metal-oxide-semiconductor field-effect transistors have been constructed, using a novel edge deposition technique, which have active channel lengths ranging from 7.7 to 124 nm. The electrical conductance of the devices, at temperatures below 4.2 K, shows oscillations which are attributed to quantum mechanical interference due to reflections from the device edges. Model calculations are in good agreement with the experiment.