Publication
Applied Physics Letters
Paper

Quantum interference in ultrashort channel length silicon metal-oxide-semiconductor field-effect transistors

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Abstract

Silicon metal-oxide-semiconductor field-effect transistors have been constructed, using a novel edge deposition technique, which have active channel lengths ranging from 7.7 to 124 nm. The electrical conductance of the devices, at temperatures below 4.2 K, shows oscillations which are attributed to quantum mechanical interference due to reflections from the device edges. Model calculations are in good agreement with the experiment.

Date

01 Dec 1991

Publication

Applied Physics Letters

Authors

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