J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
We report experimental evidence for the existence of three-dimensionally (3D) -confined biexcitons in a strain-relaxed (Formula presented)(Formula presented) layer grown on a stepwise graded buffer on Si(001) by ultrahigh vacuum chemical vapor deposition. A calculation of the photoluminescence line shape based on a simple model is found to be in good agreement with experiment. From this theoretical fit we deduce a binding energy of 1.55 meV for the 3D-confined biexcitons. This binding energy is larger than the reported value of 1.36 meV for a free biexciton in Si, indicating a quantum-confinement effect. © 1997 The American Physical Society.
J.H. Kaufman, Owen R. Melroy, et al.
Synthetic Metals
R.W. Gammon, E. Courtens, et al.
Physical Review B
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999