P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Paper
Quantized magnetoresistance in two-dimensional electron systems
Abstract
In a quantizing magnetic field, the resistance value of a two-dimensional electron gas between any well-resolved magnetic levels in any open geometry is given by multiple fractions of he2. Measurements in various geometrical configurations of Si(100) (metal-oxide-semiconductor) transistor yield a well-defined and accurate plateau of these values. © 1983 The American Physical Society.
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