G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters
A standard pyrometer is modified with a long working distance magnifier and used to measure temperature in situ during cw argon laser annealing of ion-implanted Si. The measured temperatures of 1020 and 1077°C and observed regrowth rates for 900 Å of amorphous Si in 2×10-4 and 4×10-4 sec respectively agree reasonably well with the solid-state Si regrowth rate previously determined by others from furnace annealing experiments in the minutes to hours time regime.
G.A. Sai-Halasz, F. Fang, et al.
Applied Physics Letters
T.O. Sedgwick
Journal of Applied Physics
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993
J.E. Smith Jr., T.O. Sedgwick
Letters in Heat and Mass Transfer