Pyrometric measurement of temperature during cw argon-ion laser annealing and the solid-state regrowth rate of amorphous Si

Abstract

A standard pyrometer is modified with a long working distance magnifier and used to measure temperature in situ during cw argon laser annealing of ion-implanted Si. The measured temperatures of 1020 and 1077°C and observed regrowth rates for 900 Å of amorphous Si in 2×10-4 and 4×10-4 sec respectively agree reasonably well with the solid-state Si regrowth rate previously determined by others from furnace annealing experiments in the minutes to hours time regime.