Publication
IEEE Electron Device Letters
Paper

Pulse-Train Method to Measure Transient Response of Field-Effect Transistors

View publication

Abstract

A simple method to measure the short time-domain output current of field-effect transistors (FETs) is demonstrated. By applying short gate pulses and measuring average output current, the response to very short pulses can be measured and compared with DC measurements. Applied to several novel III-V FETs, the technique shows clearly that when charge trapping and interface states affect drain currents, the intrinsic performance can be substantially better than the DC measurements indicate.

Date

01 Feb 2019

Publication

IEEE Electron Device Letters

Authors

Share