Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
A PtRh resistor has been developed as an integral part of an advanced planarized low-TcJosephson technology that is compatible with Si integrated circuit processing. Electron-beam evaporated from a single source, the PtRh films have a sheet resistance well controlled in the range of 3–20 Ω / square that is independent of temperature from 4.2 K down to at least 10 mK. The contact resistivity between PtRh, with a sheet resistance of 5 Ω / square and Nb interconnects is typically 0.7 Ω ⋅ μm. © 1994 IEEE
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983