P. Alnot, D.J. Auerbach, et al.
Surface Science
A PtRh resistor has been developed as an integral part of an advanced planarized low-TcJosephson technology that is compatible with Si integrated circuit processing. Electron-beam evaporated from a single source, the PtRh films have a sheet resistance well controlled in the range of 3–20 Ω / square that is independent of temperature from 4.2 K down to at least 10 mK. The contact resistivity between PtRh, with a sheet resistance of 5 Ω / square and Nb interconnects is typically 0.7 Ω ⋅ μm. © 1994 IEEE
P. Alnot, D.J. Auerbach, et al.
Surface Science
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
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