PtRh Resistors for Si Compatible Low-J_cJosephson Technology

Abstract

A PtRh resistor has been developed as an integral part of an advanced planarized low-TcJosephson technology that is compatible with Si integrated circuit processing. Electron-beam evaporated from a single source, the PtRh films have a sheet resistance well controlled in the range of 3–20 Ω / square that is independent of temperature from 4.2 K down to at least 10 mK. The contact resistivity between PtRh, with a sheet resistance of 5 Ω / square and Nb interconnects is typically 0.7 Ω ⋅ μm. © 1994 IEEE